Write 7 pages with APA style on Analysis of Articles about Gallium Arsenide
Write 7 pages with APA style on Analysis of Articles about Gallium Arsenide. In the first article, the experiment was ‘Metamorphic Graded Bandgap InGaAs–InGaAlAs–InAlAs Double Heterojunction P-i-I-N Photodiodes.’ The authors of the article are Jae-Hyung Jang, William E. Hoke, Gabriel Cueva, Patrick Fay, P. J. Lemonias, and Ilesanmi Adesida. The experiment involved fabrication of high-speed metamorphic double hetero-junction photodiodes on GaAs substrates for the purpose of long-wave-length fibre optical communications.
According to Jae-Hyung Jang, et al, high speed in InGaAs photodiodes are very important components in extensive bandwidth optical fiber communication. Moreover, these photodiodes have been fabricated on InP subtracts as a result of the web matching of In0.33 Ga0.47 As to Inp. Jae-Hyung Jang, et al denote that Inp substrates have numerous practical shortcomings as compared to GaAs, that have encouraged the development of metamorphic device structure conducted on GaAs substrates.
As per the authors of the article, the growth of excellent InGaAs–InGaAlAs–InAlAs heterostructures on GaAs substrates was made possible by the superiority linearly graded quaternary InGaAlAs metamorphic buffer layer (Jae-Hyung Jang, et al. 1). Photodiodes achieving a small dark current of 500 pA, a 3 dB bandwidth of 38 GHz at 5 V reverse bias for 1.55 m light, and responsivity of 0.6 A/Wwas enabled by the use of a fresh double hetero-structure employing an InGaAlAs ophthalmic impedance matching layer, a large band-gap I-InAlAs drift region, and a chirped InGaAs–InAlAs super-lattice graded band-gap layer (SL-GBL). Moreover, the authors of the article examined the effect of amassed charges at the InGaAs–InAlAs hetero-interface. This examination was carried out through a comparison between photodiodes with chirped InGaAs–InAlAs SL-GBLs and InGaAs–InP unexpected sole heterojunction photodiodes and the dark currents of InGaAs–InAlAs. By including chirped InGaAs–InAlAs SL-GBL between the InAlAs drift layer and InGaAs absorption layer, the authors suppressed the charge build-up effects observed in abrupt hetero-junction devices (Jae-Hyung Jang, et al. 1). .  .