Write 7 pages with APA style on Analysis of Articles about Gallium Arsenide

Write 7 pages with APA style on Analysis of Articles about Gallium Arsenide. In the first article, the experiment was ‘Metamorphic Graded Bandgap InGaAs–InGaAlAs–InAlAs Double Heterojunction P-i-I-N Photodiodes.’ The authors of the article are Jae-Hyung Jang, William E. Hoke, Gabriel Cueva, Patrick Fay, P. J. Lemonias, and Ilesanmi Adesida. The experiment involved fabrication of high-speed metamorphic double hetero-junction photodiodes on GaAs substrates for the purpose of long-wave-length fibre optical communications.

According to Jae-Hyung Jang, et al, high speed in InGaAs photodiodes are very important components in extensive bandwidth optical fiber communication. Moreover, these photodiodes have been fabricated on InP subtracts as a result of the web matching of In0.33 Ga0.47 As to Inp. Jae-Hyung Jang, et al denote that Inp substrates have numerous practical shortcomings as compared to GaAs, that have encouraged the development of metamorphic device structure conducted on GaAs substrates.

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As per the authors of the article, the growth of excellent InGaAs–InGaAlAs–InAlAs heterostructures on GaAs substrates was made possible by the superiority linearly graded quaternary InGaAlAs metamorphic buffer layer (Jae-Hyung Jang, et al. 1). Photodiodes achieving a small dark current of 500 pA, a 3 dB bandwidth of 38 GHz at 5 V reverse bias for 1.55 m light, and responsivity of 0.6 A/Wwas enabled by the use of a fresh double hetero-structure employing an InGaAlAs ophthalmic impedance matching layer, a large band-gap I-InAlAs drift region, and a chirped InGaAs–InAlAs super-lattice graded band-gap layer (SL-GBL). Moreover, the authors of the article examined the effect of amassed charges at the InGaAs–InAlAs hetero-interface. This examination was carried out through a comparison between photodiodes with chirped InGaAs–InAlAs SL-GBLs and InGaAs–InP unexpected sole heterojunction photodiodes and the dark currents of InGaAs–InAlAs. By including chirped InGaAs–InAlAs SL-GBL between the InAlAs drift layer and InGaAs absorption layer, the authors suppressed the charge build-up effects observed in abrupt hetero-junction devices (Jae-Hyung Jang, et al. 1).&nbsp. &nbsp.

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